Download PDF - Residual stresses in polycrystalline sheet silicon and it's relation to lifetime
This paper summarizes the research on the characterization of residual stresses and lifetime of polycrystalline sheet silicon for photovoltaic application. Full-field polariscopy, scanning room temperature photoluminescence (PL) and surface photovoltage (SPV) are used to characterize unprocessed silicon sheets. An orientation-dependent stress-optic coefficient has been developed and used to extract the in-plane residual stresses. The characteristics of the spatial distribution and the quantitative correlation between the residual stresses and the lifetime are presented.