RUV in Silicon
The Resonance Ultrasonic Vibrations (RUV) technique is adapted for non-destructive crack detection in full-size silicon wafers for solar cells. The RUV methodology relies on a deviation of the frequency response curve of a wafer, ultrasonically stimulated via vacuum coupled piezoelectric transducer, with a periphery crack versus regular non-cracked wafers as detected by a periphery mounted acoustic probe. Crack detection is illustrated on a set of cast wafers. We performed vibration mode identification on square-shaped production-grade Si wafers and confirmed by finite element analyses. The computer modeling was accomplished for the different modes of the resonance vibrations of a wafer with a periphery crack to assess the sensitivity of the RUV method relative to crack length and crack location.